Abstract:
Defect-free and long SiC/C nanocables have been produced by heating SiC powder at 3000A degrees C by employing dc arc plasma (Ar) in a specially designed configuration of graphite arc. Microstructural characterizations of the heat-treated powder carried out by TEM, HRTEM, SAED, EDS, and micro Raman spectroscopy showed the nanocables to consist of a SiC shell/sheath stuffed with wire type solid C core. A possible mechanism is discussed to explain the cable-type growth.