| dc.contributor.author |
Nayak, B.B. |
|
| dc.date.accessioned |
2018-10-01T12:25:00Z |
|
| dc.date.available |
2018-10-01T12:25:00Z |
|
| dc.date.issued |
2012 |
|
| dc.identifier.citation |
Applied Physics A-Materials Science & Processing, 106(1), 2012: 99-104 |
|
| dc.identifier.issn |
0947-8396 |
|
| dc.identifier.uri |
http://ore.immt.res.in/handle/2018/1767 |
|
| dc.description.abstract |
Defect-free and long SiC/C nanocables have been produced by heating SiC powder at 3000A degrees C by employing dc arc plasma (Ar) in a specially designed configuration of graphite arc. Microstructural characterizations of the heat-treated powder carried out by TEM, HRTEM, SAED, EDS, and micro Raman spectroscopy showed the nanocables to consist of a SiC shell/sheath stuffed with wire type solid C core. A possible mechanism is discussed to explain the cable-type growth. |
|
| dc.language |
en |
|
| dc.publisher |
Springer |
|
| dc.relation.isreferencedby |
SCI |
|
| dc.rights |
Copyright [2012]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository. |
|
| dc.subject |
Materials Sciences |
|
| dc.subject |
Physical Sciences |
|
| dc.title |
SiC/C nanocable structure produced in silicon carbide by arc plasma heating |
|
| dc.type |
Journal Article |
|
| dc.affiliation.author |
CSIR-IMMT, Bhubaneswar 751013, Odisha, India |
|