Abstract:
Copper Selenide (Cu2Se) thin films were deposited on a float glass substrate using magnetron sputtering with a radio frequency (RF) source at a power of 70 W and by varying substrate temperatures (Tsub) from 50 degrees C to 400 degrees C with an interval of 50 degrees C. The influence of the Tsub on the morphological, structural, and mechanical characteristics of Cu2Se thin films was investigated using the Grazing Incidence X-ray diffraction (GIXRD), Raman spectra, Field Emission Scanning Electron Microscopy (FESEM) combined with energy-dispersive spectroscopy (EDS) and Nanoindentation. The results of the GIXRD analysis suggest that the cubic Cu2-xSe phase could be observed when the deposition took place at Tsub of 50 to 200 degrees C. However, for the films that were deposited at temperatures higher than this range, i.e., from 250 degrees C to 400 degrees C, the elements Cu and Se formed an intermediate phase. Raman bands assigned at 261 cm_ 1 confirm the cubic-Cu2Se phase. The average grain size measured from FESEM images increase with varying Tsub from 50 degrees C to 400 degrees C with a value of 230 nm to 320 nm. The variation in the Tsub results in the evolution of the microstructure and EDS shows the variation in the stoichiometric ratio of deposition. The energy of the band gap decreases with an increase in Tsub, leading to the overlapping of energy levels. The nanoindentation tests show that the hardness dropped as the Tsub increased from 50 degrees C to 400 degrees C. The Cu2Se film deposited at Tsub 50 degrees C had the highest hardness value of 1.91 +/- 0.47 GPa.