Carbon/Silicon Carbide (SiC) nanotubes were found to grow by treating graphite circular disc and silicon carbide grains in an arc plasma reactor/furnace followed by 4 h of in situ furnace cooling. The arc plasma treatment of samples was carried out in a dc extended 50 kW thermal arc plasma reactor. The plasma treatment was carried out from 5-20 min under Ar atmosphere. Typical in situ grown nanotubes were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectra (EDS) and micro Raman spectroscopy, and it is established from these evaluations that the nanotubes are made up of silicon carbide and carbon in SiC and graphite circular disc respectively. In this work we have synthesized and studied the growth of C/SiC nanotubes by dc extended thermal arc plasma method. (C) 2019 Elsevier Ltd. All rights reserved.
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