Multicomponent Zn(1-x)Fe0.8xNa0.2xO semiconductors: Effect of dopant concentration and ionic radius on structural, opto-electronics, magnetic and sensing properties
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Multicomponent Zn(1-x)Fe0.8xNa0.2xO semiconductors: Effect of dopant concentration and ionic radius on structural, opto-electronics, magnetic and sensing properties
Bajpai, G.; Ostawal, M.; Moirangthem, I.; Bajpai, S.; Basaula, D.R.; Khan, M.; Liu, S.W.; Biring, S.; Sen, S.
Citation:Materials Science in Semiconductor Processing, 98, 2019: 121-130
Fe incorporation in ZnO lattice draws more oxygen which reduces oxygen vacancies. The smaller size and larger charge of the Fe3+ ion helps to reduce strain initially but with increased substitution generates more strain due to excess oxygen and structural deformation. The mismatch of ionic radii may be addressed by co-substituting with a larger element but with lesser charge. Oxygen defects play a vital role in magnetization and UV-sensing properties of pure ZnO. Oxygen vacancy mediated ferromagnetic exchange interaction should reduce in Fe-doped ZnO due to reduction oxygen vacancies. Similarly UV-sensing should also decrease. Larger sized Na+ co-incorporation, with smaller Fe3+, helps retention of oxygen vacancies in Zn(1-x)Fe(0.8x)Na(0.2x)O (0 <= x <= 4/128) enhancing magnetization and enabling faster UV-sensing properties. The x = 4/128 sample reveals promising magnetization and shows faster UV-sensing.
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