Room temperature ferromagnetism (RTFM) is observed in 5 and 7% Ar implanted ZnO single crystals after annealing the implanted ZnO single crystals at 750 degrees C for seven hours. The presence of oxygen vacancies in 5 and 7 % Ar implanted ZnO samples is the main reason of showing RTFM. There is no contribution of magnetism from Ar ions. But Ar ions play a major role in creating lattice defects with the increase of incident ion fluencies.
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