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Comparative study of ZnO thin films deposited by various methods for use as sensors

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dc.contributor.author Behera, D.
dc.contributor.author Acharya, B.S.
dc.date.accessioned 2018-10-01T12:22:12Z
dc.date.available 2018-10-01T12:22:12Z
dc.date.issued 2004
dc.identifier.citation Ionics, 10(1-2), 2004: 155-158
dc.identifier.issn 0947-7047
dc.identifier.uri http://ore.immt.res.in/handle/2018/1122
dc.description.abstract Good and adhesive semiconducting films of ZnO (approximate to 100-1100 nm) were deposited over planar borosilicate glass by spray pyrolysis and dip & dry method. The films were characterized by Xray diffraction and optical absorption measurements. The band gap of these films were found to be 3.21 eV and the films were randomly oriented having average crystallite sizes of 20 to 25 nm.
dc.language en
dc.publisher Institute for IONICS
dc.relation.isbasedon International Conference on Ionic Devices., Chennai, India; NOV 28-30, 2003
dc.relation.isreferencedby SCI
dc.rights Copyright [2004]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository.
dc.subject Chemical Sciences
dc.subject Chemical Sciences
dc.subject Physical Sciences
dc.title Comparative study of ZnO thin films deposited by various methods for use as sensors
dc.type Journal Article
dc.affiliation.author CSIR-IMMT, Bhubaneswar 751013, Odisha, India


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