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Impact of synthesis-induced disorder on the structural, electrical, and optical properties of BaTi1-xHfxO3, 0 ? x ? 0.08

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dc.contributor.author Elorika, P
dc.contributor.author Anwar, S
dc.contributor.author Anwar, S
dc.date.accessioned 2023-10-10T06:04:05Z
dc.date.available 2023-10-10T06:04:05Z
dc.date.issued 2023
dc.identifier.citation Materials Research Bulletin, 167, 2023; 112424
dc.identifier.issn 0025-5408
dc.identifier.uri http://ore.immt.res.in/handle/2018/3308
dc.description CSIR-India under the Advanced Material Mission (AMM) [HCP 030]; Department of Science and Technology (DST) India
dc.description.abstract We investigated the effect of hafnium (Hf4+) substitution on the structural, morphology, electrical, and optical properties of barium titanate (BT), prepared via the modified (low-temperature sintered) solid-state reaction route. The structural refinement confirmed the formation of a single phase for pure and a mixture of phases for Hf-doped BT. The presence of [TiO6] and [HfO6] octahedra was confirmed by Raman analysis. The XPS analysis confirmed the formation of structural disordering associated with oxygen vacancies. The highest piezoelectric charge coefficient of 193 pC/N was found for BHT-5 (5% Hf). An energy storage efficiency & GE; 65% makes all the ceramics suitable for high-energy-density capacitors applications. With an increase in Hf4+ content, the optical bandgap widened. The direct optical bandgap ranged from 2.783 to 2.892 eV, making them ideal for optoelectronic applications. The presence of Ti3+/Hf3+ ions decreased the optical bandgap for all compositions.
dc.language en
dc.publisher Pergamon-Elsevier
dc.relation.isreferencedby SCI
dc.rights Copyright [2023]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository.
dc.subject Materials Sciences
dc.title Impact of synthesis-induced disorder on the structural, electrical, and optical properties of BaTi1-xHfxO3, 0 ? x ? 0.08
dc.type Journal Article
dc.affiliation.author CSIR-IMMT, Bhubaneswar 751013, Odisha, India


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