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Effect of vacancy on thermoelectric properties of polycrystalline SnSe

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dc.contributor.author Gowthamaraju, S.
dc.contributor.author Deshpande, U.P.
dc.contributor.author Anwar, S.
dc.contributor.author Nigam, A.K.
dc.contributor.author Bhobe, P.A.
dc.date.accessioned 2023-07-28T05:00:48Z
dc.date.available 2023-07-28T05:00:48Z
dc.date.issued 2021
dc.identifier.citation Journal of Materials Science-Materials in Electronics, 32(9), 2021: 11568-11576
dc.identifier.issn 0957-4522
dc.identifier.uri http://ore.immt.res.in/handle/2018/2941
dc.description.abstract Recently reported unprecedented ZT value of similar to 2.6 at 915 K for single crystalline SnSe makes this compound as promising candidate for thermoelectric application. The enhancement of thermoelectric conversion efficiency of the polycrystalline form of SnSe is equally essential for commercialization and mass scale production. Herein, we report the effect of cation vacancies on the thermoelectric properties of pure and substituted (5% of Sb and In) compositions. Phase pure compositions with nano-sheet-like stacked morphology have been studied for its crystal structure, electrical conduction, Seebeck coefficient and thermal conduction. Presence of vacancies and localized states confirmed from Urbach energy and shows significant influence on resistivity and Seebeck coefficient. Anisotropy in the crystal structure and presence of defects (point and vacancies) are found to be the major contributors for reduction in the thermal conductivity by 41% and 64% for Sb and In substituted compositions, respectively.
dc.language en
dc.publisher Springer
dc.relation.isreferencedby SCI
dc.rights Copyright [2021]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository.
dc.subject Engineering
dc.subject Materials Sciences
dc.subject Physical Sciences
dc.title Effect of vacancy on thermoelectric properties of polycrystalline SnSe
dc.type Journal Article
dc.affiliation.author IIT Indore, Indore 453552, Madhya Pradesh, India


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