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Dielectric Behavior of Barium modified Strontium Bismuth Titanate Ceramic

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dc.contributor.author Nayak, P.
dc.contributor.author Badapanda, T.
dc.contributor.author Anwar, Shahid
dc.contributor.author Panigrahi, S.
dc.contributor.editor Murli, C.
dc.contributor.editor Bhattacharyya, D.
dc.contributor.editor Gadkari, S.C.
dc.date.accessioned 2018-10-01T12:25:23Z
dc.date.available 2018-10-01T12:25:23Z
dc.date.issued 2014
dc.identifier.citation Solid State Physics: Proceedings Of The 58th Dae Solid State Physics Symposium 2013, Pts A & B, 1591, 2014: 76-78
dc.identifier.isbn 978-0-7354-1225-5
dc.identifier.issn 0094-243X
dc.identifier.uri http://ore.immt.res.in/handle/2018/1948
dc.description.abstract Barium Modified Strontium Bismuth Titanate(SBT) ceramic with general formula Sr1-xBaxBi4Ti4O15 is prepared by solid state reaction route. The structural analysis of the ceramics was done by X-ray diffraction technique. The X-ray patterns show that all the compositions are of single phase with orthorhombic structure. The temperature dependent dielectric behavior shows that the transition temperature decreases with Ba content but the maximum dielectric constant increases. The decreases of the transition with increase in Ba2+ ion, may be due to the decrease of orthorhombicity by the incorporation of Ba2+ ion in SBT lattice.
dc.language en
dc.publisher American Institute Of Physics
dc.relation.ispartofseries AIP Conference Proceedings
dc.relation.isbasedon 58th DAE Solid State Physics Symposium., Patiala, India; DEC 17-21, 2013
dc.relation.isreferencedby SCI
dc.rights Copyright [2014]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository.
dc.subject Physical Sciences
dc.subject Physical Sciences
dc.title Dielectric Behavior of Barium modified Strontium Bismuth Titanate Ceramic
dc.type Proceedings Paper
dc.affiliation.author Natl Inst Technol, Dept Phys, Rourkela 769008, Odisha, India


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