| dc.contributor.author |
Martha, S. |
|
| dc.contributor.author |
Parida, K.M. |
|
| dc.date.accessioned |
2018-10-01T12:24:55Z |
|
| dc.date.available |
2018-10-01T12:24:55Z |
|
| dc.date.issued |
2012 |
|
| dc.identifier.citation |
International Journal Of Hydrogen Energy, 37(23), 2012: 17936-17946 |
|
| dc.identifier.issn |
0360-3199 |
|
| dc.identifier.uri |
http://ore.immt.res.in/handle/2018/1710 |
|
| dc.description |
CSIR [NWP 22]; DST |
|
| dc.description.abstract |
N-doped In2Ga2ZnO7 photocatalysts were fabricated by solid state reaction route. All the prepared photocatalysts were successfully characterised by PXRD, optical absorption spectra, SEM, TEM, XPS, BET surface area and photoresponse studies. The formation of In2Ga2ZnO7 was confirmed by the PXRD pattern. Optical absorption spectra showed that the visible light absorption of all the photocatalysts were enhanced by nitrogen doping. Among all the prepared photocatalysts, 1 wt% Pt loaded N-GaInZn-500 showed enhanced photocatalytic activity towards hydrogen evolution under visible light irradiation in presence of 10 vol% methanol solution as sacrificial agent. The excellent photocatalytic activity of N-GaInZn-500 is in agreement with N-content, bandgap energy, PL intensity and Surface area. Copyright (c) 2012, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved. |
|
| dc.language |
en |
|
| dc.publisher |
Elsevier |
|
| dc.relation.isreferencedby |
SCI |
|
| dc.rights |
Copyright [2012]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository. |
|
| dc.subject |
Chemical Sciences |
|
| dc.subject |
Chemical Sciences |
|
| dc.subject |
Chemical Sciences |
|
| dc.title |
Fabrication of nano N-doped In2Ga2ZnO7 for photocatalytic hydrogen production under visible light |
|
| dc.type |
Journal Article |
|
| dc.affiliation.author |
CSIR-IMMT, Bhubaneswar 751013, Odisha, India |
|