| dc.contributor.author |
Chattopadhyay, S. |
|
| dc.contributor.author |
Dutta, S. |
|
| dc.contributor.author |
Pandit, P. |
|
| dc.contributor.author |
Jana, D. |
|
| dc.contributor.author |
Chattopadhyay, S. |
|
| dc.contributor.author |
Sarkar, A. |
|
| dc.contributor.author |
Kumar, P. |
|
| dc.contributor.author |
Kanjilal, D. |
|
| dc.contributor.author |
Mishra, D.K. |
|
| dc.contributor.author |
Ray, S.K. |
|
| dc.contributor.editor |
Fujita, S. |
|
| dc.date.accessioned |
2018-10-01T12:24:51Z |
|
| dc.date.available |
2018-10-01T12:24:51Z |
|
| dc.date.issued |
2011 |
|
| dc.identifier.citation |
Physica Status Solidi C: Current Topics In Solid State Physics, Vol 8, No 2, 8(2), 2011 |
|
| dc.identifier.issn |
1862-6351 |
|
| dc.identifier.uri |
http://ore.immt.res.in/handle/2018/1666 |
|
| dc.description |
DST-FIST; Govt. of West Bengal for providing Research |
|
| dc.description.abstract |
We report a systematic study on 1.2 MeV Ar8+ irradiated ZnO by X-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10(16) ions/cm(2). Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10(15) ions/cm(2)), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10(15) ions/cm(2) fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10(15) ions/cm(2) fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
|
| dc.language |
en |
|
| dc.publisher |
Wiley |
|
| dc.relation.ispartofseries |
Physica Status Solidi C-Current Topics in Solid State Physics |
|
| dc.relation.isbasedon |
37th International Symposium on Compound Semiconductors (ISCS)., Takamatsu, Japan; MAY 31-JUN 04, 2010 |
|
| dc.relation.isreferencedby |
SCI |
|
| dc.rights |
Copyright [2011]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository. |
|
| dc.subject |
Engineering |
|
| dc.subject |
Physical Sciences |
|
| dc.subject |
Physical Sciences |
|
| dc.title |
Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation |
|
| dc.type |
Proceedings Paper |
|
| dc.affiliation.author |
Univ Calcutta, Dept Phys, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, India |
|