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Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

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dc.contributor.author Chattopadhyay, S.
dc.contributor.author Dutta, S.
dc.contributor.author Pandit, P.
dc.contributor.author Jana, D.
dc.contributor.author Chattopadhyay, S.
dc.contributor.author Sarkar, A.
dc.contributor.author Kumar, P.
dc.contributor.author Kanjilal, D.
dc.contributor.author Mishra, D.K.
dc.contributor.author Ray, S.K.
dc.contributor.editor Fujita, S.
dc.date.accessioned 2018-10-01T12:24:51Z
dc.date.available 2018-10-01T12:24:51Z
dc.date.issued 2011
dc.identifier.citation Physica Status Solidi C: Current Topics In Solid State Physics, Vol 8, No 2, 8(2), 2011
dc.identifier.issn 1862-6351
dc.identifier.uri http://ore.immt.res.in/handle/2018/1666
dc.description DST-FIST; Govt. of West Bengal for providing Research
dc.description.abstract We report a systematic study on 1.2 MeV Ar8+ irradiated ZnO by X-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10(16) ions/cm(2). Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10(15) ions/cm(2)), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10(15) ions/cm(2) fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10(15) ions/cm(2) fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.language en
dc.publisher Wiley
dc.relation.ispartofseries Physica Status Solidi C-Current Topics in Solid State Physics
dc.relation.isbasedon 37th International Symposium on Compound Semiconductors (ISCS)., Takamatsu, Japan; MAY 31-JUN 04, 2010
dc.relation.isreferencedby SCI
dc.rights Copyright [2011]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository.
dc.subject Engineering
dc.subject Physical Sciences
dc.subject Physical Sciences
dc.title Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation
dc.type Proceedings Paper
dc.affiliation.author Univ Calcutta, Dept Phys, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, India


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