Synthesis of beta-SiC Powder from Bamboo Leaf in a DC Extended Thermal Plasma Reactor

Abstract

Fine silicon carbide powder was synthesized from bamboo leaf in a DC thermal plasma reactor through a single step process. With an applying current of 300amp and 50V voltages, the optimum duration of conversion of silica rich bamboo leaf to silicon carbide is 20 minutes. X-ray diffraction (XRD) results reveal that the final product is identified as beta-SiC having lattice parameter a = 4.295 angstrom, which is in close agreement with the reported value of 4.347 angstrom. The scanning electron microscope (SEM) micrograph clearly shows the formation of cubical particles of beta-SiC. The micro-Raman and X-ray photoelectron spectroscopy (XPS) analysis also confirm the formation of beta-SiC phase.