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No room temperature ferromagnetism in Mn over-doped Zn1-xMnxO (x > 0.02)

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dc.contributor.author Das, J.
dc.contributor.author Mishra, D.K.
dc.contributor.author Sahu, D.R.
dc.contributor.author Pradhan, S.K.
dc.contributor.author Roul, B.K.
dc.date.accessioned 2018-10-01T12:24:47Z
dc.date.available 2018-10-01T12:24:47Z
dc.date.issued 2011
dc.identifier.citation Journal Of Magnetism And Magnetic Materials, 323(5), 2011: 641-645
dc.identifier.issn 0304-8853
dc.identifier.uri http://ore.immt.res.in/handle/2018/1599
dc.description.abstract Mn-doped ZnO samples having composition Zn1-xMnxO (x=0.02, 0.04 and 0.05) were synthesized by solid state reaction technique with varying concentration of Mn from 0.02 to 0.05. Evidence of room temperature ferromagnetism was observed only in the composition Zn0.98Mn0.02O sintered at 500 degrees C. Our XRD pattern confirms the presence of Mn3O4 impurity phase in all the Zn1-xMnxO samples with the exception of Zn0.98Mn0.02O. We emphasize that the appearance of Mn3O4 phase in the system forbids the exchange type of interaction between the Mn ions and suppresses the ferromagnetism in all the Mn over-doped Zn1-xMnxO (x > 0.02) system. SEM microstructure study also supports the interruption of exchange type of interaction inside the system with the increase in Mn concentration in the sample. Interestingly, for this particular composition, Zn0.98Mn0.02O sintered at 500 degrees C, glassy ferromagnetism type of transition is observed at low temperature. This type of transition is attributed to the formation of the oxides of Mn clusters at low temperature. (C) 2010 Elsevier B.V. All rights reserved.
dc.language en
dc.publisher Elsevier
dc.relation.isreferencedby SCI
dc.rights Copyright [2011]. All efforts have been made to respect the copyright to the best of our knowledge. Inadvertent omissions, if brought to our notice, stand for correction and withdrawal of document from this repository.
dc.subject Materials Sciences
dc.subject Physical Sciences
dc.title No room temperature ferromagnetism in Mn over-doped Zn1-xMnxO (x > 0.02)
dc.type Journal Article
dc.affiliation.author Silicon Inst Technol, Dept Phys, Bhubaneswar 751024, Orissa, India


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