Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

Abstract

Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top- and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200 degrees C for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes.