Browsing by Author "Udono, H"

Now showing items 1-2 of 2

Effects of Te-doping on the thermoelectric properties of InGaSb crystals

Velu, NK; Hayakawa, Y; Udono, H; Inatomi, Y (Journal Of Materials Science-Materials In Electronics, 34(19), 2023; 1480)

Thermoelectric materials with optimum carrier concentration of the order of 10(19)-10(20)/cm(3) are required to obtain a high figure of merit (ZT) value. As undoped In0.8Ga0.2Sb has a lower carrier concentration (similar ...
Record High Thermoelectric Figure of Merit of a III-V Semiconductor InGaSb by Defects Engineering via the Addition of Excess Constituent Elements

Velu, NK; Hayakawa, Y; Udono, H; Sakane, S; Inatomi, Y (Acs Applied Materials & Interfaces, 16, 2024; 46433-46441)

Materials with enhanced electron and reduced phonon transport properties are preferred for thermoelectric applications. The defect engineering process can optimize the interrelated electron and phonon transport properties ...

Search Repository