Sati, Aanchal; Kumar, Anil; Mishra, Vikash; Warshi, Kamal; Sagdeo, Archna; Anwar, Shahid; Kumar, Rajesh; Sagdeo, P. R.
(Journal Of Materials Science-Materials In Electronics, 30(8), 2019: 8064-8070)
Effect of Hf doping at Ti site in BaTiO3 on the optical band gap (E-g), Urbach energy (E-u), dielectric constant (epsilon) and dielectric loss i.e. loss tangent (tan) have been investigated. It has been observed that with ...