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Browsing by Author "Narayanan, H.K."

Browsing by Author "Narayanan, H.K."

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  • Enhancement of weak magnetism of 3C-SiC by 3d-transition metal doping 
    Moharana, G.P.; Singh, S.K.; Narayanan, H.K. (Solid State Communications, 369, 2023: 115217)
    Defects seem to play a very decisive role in setting up long-range magnetic order in 3C-SiC. The feeble ferro-magnetic response exhibited by SiC at room temperature, known as d0 magnetism, has been attributed to defects ...
  • F+ center exchange mechanism and magnetocrystalline anisotropy in Ni-doped 3C-SiC 
    Moharana, G.P.; Kothari, R.; Singh, S.K.; Babu, P.D.; Narayanan, H.K. (Journal of Magnetism and Magnetic Materials, 555, 2022: 169358)
    Towards the development of a magnetic semiconductor suitable for spintronic device applications in extreme environments, we explored the possibility of inducing magnetic interaction in SiC by doping Nickel. The X-ray ...
  • Ferromagnetism in Mn doped 3C-SiC: A variable temperature ESR study 
    Moharana, G.P.; Singh, S.K.; Narayanan, H.K. (Journal of Magnetism and Magnetic Materials, 527, 2021: 167707)
    This paper discusses the effect of defects and role of charge carriers in setting up the long range magnetic order in Mn doped 3C-SiC. Using complementary experiments like temperature variation of Electron Spin Resonance ...
  • Investigation of magnetic order and spin dynamics in Mn doped 3C-SiC 
    Moharana, G.P.; Singh, S.K.; Babu, P.D.; Narayanan, H.K. (Journal Of Alloys And Compounds, 765, 2018: 314-323)
    As SiC is a technological important material which is being used for a wide variety of device applications that can work under harsh environment, inducing magnetic order in this material without altering its other physical ...
  • Role of spin, phonon and plasmon dynamics on ferromagnetism in Cr doped 3C-SiC 
    Moharana, G.P.; Kothari, R.; Narayanan, H.K.; Singh, S.K. (Journal of Magnetism and Magnetic Materials, 491, 2019: 165505)
    We report the structural stability and magnetic interaction in Cr doped 3C-SiC synthesized by Thermal Plasma Technique. The EPR spectrum of undoped 3C-SiC shows a sharp resonance line corresponding to g = 2.00 associated ...

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